The group published two papers in the upcoming 50th Anniversary Special Issue of JMS. Both publications deal with uniques properties of ferroelectric multilayers. Misirlioglu et al. provide theoretical proof that ferroelectric/paraelectric multilayers could potentially be used as low-voltage gate materials. Yomery, Fu-Chang, and Tumerkan show that ferroelectric heterostructures cannot be considered as simple capacitors in series.
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Judicious layering of ferroelectrics leads to achieving enhanced dielectric response over a wide temperature range.
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Our group was very active at the at the 2015 IMS Affiliates Annual Meeting held on May 27 at UConn. Tulsi, Yomery, Tumerkan and Fu-Chang presented 4 posters.
Tumerkan: Characterization of Ag/W Circuit Breaker Contacts After Dry, Humid, and Natural Aging, M. Tumerkan Kesim, Haibo Yu, Yu Sun, Jason Harmon, Jonathan Potter, Mark Aindow, S. Pamir Alpay
Tulsi: Additive Manufacturing, T. Patel, V. Sharma, G. Agarwal, E. Curry, S. Pamir Alpay, A. Dongare, J. Hancock, R. Hebert
Yomery: Pyroelectric and Dielectric Properties of Ferroelectric Films With Interposed Dielectric Buffer Layers, Y. Espinal, M. T. Kesim, I. B. Misirlioglu, S. Trolier-McKinstry, J. V. Mantese, and S. Pamir Alpay
Fu-Chang: Temperature dependent structural, elastic, and polar properties of ferroelectric polyvinylidene fluoride (PVDF) and trifluoroethylene (TrFE) copolymers, Fu-Chang Sun, Avinash M. Dongare, Alexandru D. Asandei, S. Pamir Alpay, Serge Nakhmanson
Their results that were published in Appl. Phys. Lett. show that it is possible to stabilize an adaptive monoclinic phase over a wide range of misfit strains. Link to the paper.