Tumerkan Kesim and Haibo Yu (Prof. Aindow’s group) publish in Journal of Materials Science on deformation mechanisms in Ag3Sn-Cu3Sn intermetallic alloys.
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Publication in Nanoscale
Fu-Chang Sun Defends PhD Thesis!
Two Papers in Acta Materialia
Tulsi Patel and Reza Khassaf, working with Prof. Aindow and Prof. Nazanin Bassiri-Gharb, deposit PZT on additively manufactured Inconel. Alumnus Dr. Misirlioglu explains the origin of the low dielectric loss in graded ferroelectrics.
Boot up for the 2016 Fall semester
Electrocaloric Properties of Relaxor Ferroelectrics
Reza’s work with collaborators from United Technologies Research Center, Georgia Tech and Jozef Stefan Institute (Slovenia) shows that intrinsic adiabatic temperature changes in relaxor-FEs are substantial and relatively temperature insensitive. Our findings were recently published in Journal of Materials Chemistry C.
Acoustic Detection and Modeling of Phase Transitions at the Nanoscale
Our colleagues at Georgia Tech and Oak Ridge demonstrate acoustic detection in nanoscale volumes by the use of an atomic force microscope. Elastic changes in volume are measured by detecting changes in resonance of the cantilever. Reza has provided theoretical guidance, modeling the electric field driven phase transformation using Landau theory.
Reza’s work on multilayer ferroelectrics published in Acta Mater
Reza’s experimental work, in collaboration with Prof. Aindow’s group, shows that there is a dielectric anomaly in fairly thick ferroelectric-eparaelectric bilayers. Read more…
Getting together at the end of 2015
The group had a great lunch at Geno’s Grille to celebrate the Holidays. Research talk was strictly forbidden. We are looking forward to another great year!
Two publications in the Journal of Materials Science 50th Anniversary Special Issue
The group published two papers in the upcoming 50th Anniversary Special Issue of JMS. Both publications deal with uniques properties of ferroelectric multilayers. Misirlioglu et al. provide theoretical proof that ferroelectric/paraelectric multilayers could potentially be used as low-voltage gate materials. Yomery, Fu-Chang, and Tumerkan show that ferroelectric heterostructures cannot be considered as simple capacitors in series.
Read more here…